Samsung has been walking in the forefront of storage technology. Recently Samsung developed a new flash memory called V-NAND, and claimed it was two times faster and 10 times more durable than current flash NAND chips.
The new V-NAND flash chip features for its 3D structure. It is different from the traditional ones. The 3D storage modules are vertical arranged, according to Samsung. Samsung has successfully stacked 24 NAND layers in one chip package, and every stack is connected by a proprietary interconnect called “secret sauce”, which makes the 3D storage speed faster. The principle is that vertical arrangement helps reduce the distance between components and enables faster rates of data transfers. The 3D storage technology also helps to make the capacity larger. It’s easier to produce SSDs with 1TB capacity.
The new flash chips have already been producing and shipped to companies for qualification and testing. The storage technology may most likely be applied in enterprise SSDs and mobile devices if mass produced. “If you’re trying to put lots of stuff in a package, and you’re seeing the scaling laws of process technology coming to their limits, it makes sense to start stacking,” McCarron said.
Samsung developed V-NAND chips
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